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Chandrasekaran, N.*; Soga, Tetsuo*; Inuzuka, Yosuke*; Taguchi, Hironori*; Imaizumi, Mitsuru*; Oshima, Takeshi; Jimbo, Takashi*
Japanese Journal of Applied Physics, 43(10A), p.L1302 - L1304, 2004/10
Times Cited Count:6 Percentile:27.8(Physics, Applied)no abstracts in English
Khan, A.*; Yamaguchi, Masafumi*; Oshita, Yoshio*; Dharmarasu, N.*; Araki, Kenji*; Abe, Takao*; Ito, Hisayoshi; Oshima, Takeshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
Journal of Applied Physics, 90(3), p.1170 - 1178, 2001/08
Times Cited Count:56 Percentile:86.4(Physics, Applied)1MeV-electron and 10MeV-proton irradiations into Si doped various impurities such as B, Ga, O and C were performed and residual defects in the Si were studied using DLTS and C-V measurements.It was revealed that Ci-Oi whose level is Ev-0.36 eV and Bi-Oi whose energy is Ec-0.18eV were generated. In Ga-doped Si, the generation of Ci-Oi was suppressed. Since Ci-Oi acts as scattering center, this result indicates that the radiation resistance of solar cells is improved by using Ga-doped Si substrates.Furthermore, a new defect level (Ev+18eV) was observed in Ga-dpoed Si by irradiation. This defect level was annealed out above 350 C.
Matsuda, Sumio*; Tsuji, M.*; Matsuda, S.; Tanaka, Ryuichi; Sunaga, Hiromi
Proc.5th European Symp.on Photovoltaic Generators in Space, p.433 - 435, 1986/00
no abstracts in English